6970 Mosfet

Type Designator: AON6970

6970 Mosfet Circuit
6970 Mosfet Wiring

AON6970 Symbol Min Typ Max Units BV DSS 30 V VDS =30V, V GS =0V 1 TJ=55°C 5 IGSS ±100 nA VGS(th) Gate Threshold Voltage 1.3 1.8 2.3 V 4.4 5.4 TJ=125°C 6.8 8.3 6.7 8.5 mΩ gFS 80 S VSD 0.7 1 V IS 35 A Ciss 1171 pF Coss 284 pF Crss 59 pF Rg 0.3 0.6 0.9 Ω Qg(10V) 17 23 nC Qg(4.5V) 8 11 nC Qgs 4.7 nC Qgd 2 nC tD(on) 6.5 ns tr 15.5 ns t 17 ns VGS =0V, V DS =15V, f=1MHz SWITCHING.

Order today, ships today. PSB 6970 HL V1.3 – Telecom IC Ethernet Switch Controller P/PG-LQFP-100 from Infineon Technologies. Pricing and Availability on millions of electronic components from Digi-Key. The HD6970 heatsink is designed to cool surface mount components (memory, and mosfets) on the most recent revision of ATI Radeon HD 6970 2Gb Series Reference Design boards, as well as (1) HD 6950 2Gb Series reference design graphics board.

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 31(78) W

Maximum Drain-Source Voltage |Vds|: 30 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 2.3 V

Maximum Drain Current |Id|: 58(85) A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 15.5(16) nS

Drain-Source Capacitance (Cd): 284(1100) pF

Maximum Drain-Source On-State Resistance (Rds): 0.0054(0.0015) Ohm

Package: DFN5X6D

AON6970 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

AON6970 Datasheet (PDF)

0.1. aon6970.pdf Size:529K _aosemi

AON697030V Dual Asymmetric N-Channel AlphaMOSGeneral Description Product SummaryQ1 Q2 Latest Trench Power AlphaMOS (MOS LV) technology Very Low RDS(on) at 4.5VGSVDS 30V 30V Low Gate Charge ID (at VGS=10V) 58A 85A High Current Capability RDS(ON) (at VGS=10V)

8.1. aon6978.pdf Size:476K _aosemi

AON697830V Dual Asymmetric N-Channel AlphaMOSGeneral Description Product SummaryQ1 Q2 Latest Trench Power AlphaMOS (MOS LV) technology Integrated Schottky Diode (SRFET) on Low-SideVDS 30V 30V Very Low RDS(on) at 4.5V VGS ID (at VGS=10V) 28A 36A Low Gate Charge RDS(ON) (at VGS=10V)

8.2. aon6973a.pdf Size:482K _aosemi

AON6973A30V Dual Asymmetric N-Channel AlphaMOSGeneral Description Product SummaryQ1 Q2 Latest Trench Power AlphaMOS (MOS LV) technology Integrated Schottky Diode (SRFET) on Low-SideVDS 30V 30V Very Low RDS(on) at 4.5VGS ID (at VGS=10V) 28A 32A Low Gate Charge RDS(ON) (at VGS=10V)

8.3. aon6974.pdf Size:648K _aosemi

AON697430V Dual Asymmetric N-Channel AlphaMOSGeneral Description Product SummaryQ1 Q2 Latest Trench Power AlphaMOS (MOS LV) technology Integrated Schottky Diode (SRFET) on Low-SideVDS 30V 30V Very Low RDS(on) at 4.5VGS ID (at VGS=10V) 28A 36A Low Gate Charge RDS(ON) (at VGS=10V)

8.4. aon6974a.pdf Size:482K _aosemi

AON6974A30V Dual Asymmetric N-Channel AlphaMOSGeneral Description Product SummaryQ1 Q2 Latest Trench Power AlphaMOS (MOS LV) technology Integrated Schottky Diode (SRFET) on Low-SideVDS 30V 30V Very Low RDS(on) at 4.5VGS ID (at VGS=10V) 28A 32A Low Gate Charge RDS(ON) (at VGS=10V)

Datasheet: AON6924, AON6926, AON6928, AON6932A, AON6934A, AON6936, AON6938, AON6946, IRF840, AON6973A, AON6974A, AON6978, AON6980, AON7200, AON7210, AON7220, AON7240.

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FDD16AN08_F085 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

6970 Mosfet Circuit

Наименование прибора: FDD16AN08_F085

Тип транзистора: MOSFET

Полярность: N

Максимальная рассеиваемая мощность (Pd): 135 W

Предельно допустимое напряжение сток-исток |Uds|: 75 V

Предельно допустимое напряжение затвор-исток |Ugs|: 20 V

Максимально допустимый постоянный ток стока |Id|: 50 A

Максимальная температура канала (Tj): 175 °C

Общий заряд затвора (Qg): 31 nC

Barbra joan streisand twitter. Сопротивление сток-исток открытого транзистора (Rds): 0.016 Ohm

Тип корпуса: TO252

FDD16AN08_F085 Datasheet (PDF)

0.1. fdd16an08a0 f085 fdd16an08 f085.pdf Size:2944K _fairchild_semi

October 2008FDD16AN08A0_F085N-Channel UltraFET Trench MOSFET75V, 50A, 16mFeatures Applications rDS(ON) = 13m (Typ.), VGS = 10V, ID = 50A 42V Automotive Load Control Qg(tot) = 31nC (Typ.), VGS = 10V Starter / Alternator Systems Low Miller Charge Electronic Power Steering Systems Low Qrr Body Diode Electronic Valve Train Systems UIS Capabil

5.1. fdd16an08a0.pdf Size:242K _fairchild_semi

May 2002FDD16AN08A0N-Channel UltraFET Trench MOSFET75V, 50A, 16mFeatures Applications rDS(ON) = 13m (Typ.), VGS = 10V, ID = 50A 42V Automotive Load Control Qg(tot) = 31nC (Typ.), VGS = 10V Starter / Alternator Systems Low Miller Charge Electronic Power Steering Systems Low Qrr Body Diode Electronic Valve Train Systems UIS Capability (Sing

6970 Mosfet Wiring

5.2. fdd16an08a0 nf054.pdf Size:239K _fairchild_semi

Ms excel for mac torrent. May 2002FDD16AN08A0N-Channel UltraFET Trench MOSFET75V, 50A, 16mFeatures Applications rDS(ON) = 13m (Typ.), VGS = 10V, ID = 50A 42V Automotive Load Control Qg(tot) = 31nC (Typ.), VGS = 10V Starter / Alternator Systems Low Miller Charge Electronic Power Steering Systems Low Qrr Body Diode Electronic Valve Train Systems UIS Capability (Sing

Другие MOSFET.. FDH50N50, FQPF6N90C, FQPF70N10, FDH45N50F, FQPF7N60, FDN5632N_F085, FQPF7N65C, FQPF7N80C, BUZ10, FQPF7P20, FQPF85N06, FQPF8N60C, FDD24AN06L_F085, FQPF8N60CF, FDMS7680, FQPF8N80C, FQD5N15.

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