55n10 Mosfet

Part Number : AP85U03GH, Marking : 85U03GH

55n10 Mosfet Equivalent
55n10 Mosfet Datasheet

FQP55N10, QFET® N-Channel MOSFET, over 31A, Fairchild Semiconductor Fairchild Semiconductor's new QFET® planar MOSFETs use advanced, proprietary technology to offer best-in-class operating. 150V N-CHANNEL MOSFET: FQP5N20: 200V N-Channel MOSFET: FQP5N30: 300V N-Channel MOSFET: FQP5N40: 400V N-Channel MOSFET: FQP5N50: 500V N CHANNEL MOSFET: FQP5N60: 600V N-Channel MOSFET: FQP5N80: 800V N-Channel MOSFET: FQP5N90: 900V N-Channel MOSFET: FQP5P10: 100V P-Channel MOSFET: FQP5P20: 200V P-Channel MOSFET: FQP50N06: 60V N-Channel MOSFET.

Funtion : N-Channel Enhancement Mode Power MOSFET

Package : TO-252(H) Type

Manufactures : Advanced Power Electronics Corp

Image

Description

Advanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness.
The TO-252 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.

Pinout

Features

1. Low On-resistance
2. Simple Drive Requirement
3. Fast Switching Characteristic

85U03GH Datasheet

SSG4505 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: SSG4505

Тип транзистора: MOSFET

Полярность: NP

Максимальная рассеиваемая мощность (Pd): 2 W

Предельно допустимое напряжение сток-исток |Uds|: 30 V

Предельно допустимое напряжение затвор-исток |Ugs|: 20 V

Максимально допустимый постоянный ток стока |Id|: 10 A

Максимальная температура канала (Tj): 150 °C

55n10 Mosfet Equivalent

Время нарастания (tr): 10(11) ns

Выходная емкость (Cd): 430(540) pf

Сопротивление сток-исток открытого транзистора (Rds): 0.014 Ohm

Тип корпуса: SOP8

SSG4505 Datasheet (PDF)

0.1. ssg4505.pdf Size:979K _secos

SSG4505N Channel 10A, 30V,RDS(ON) 14m P Channel -8.4A, -30V,RDS(ON) 20m Elektronische Bauelemente Enhancement Mode Power Mos.FETRoHS Compliant ProductSOP-8Description0.190.250.400.90o0.375 REFThe SSG4505 provide the designer with the best combination of fast switching, 6.205.800.25ruggedized device design, low on-resistance and cost-effectiveness. 3.

8.1. ssg4502ce.pdf Size:3228K _secos

55n10 Mosfet Datasheet

Gta sa torrent for mac. SSG4502CE N & P-Ch Enhancement Mode Power MOSFET N-Ch: 10.0 A, 30 V, RDS(ON) 16 m Elektronische Bauelemente P-Ch: -8.5A, -30 V, RDS(ON) 23 m RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOP-8 DESCRIPTION These miniature surface mount MOSFETs utilize a Bhigh cell density trench process to provide low RDS(on)

8.2. ssg4503.pdf Size:1192K _secos

SSG4503N Channel 6.9A, 30V,RDS(ON) 28m P Channel -6.3A, -30V,RDS(ON) 36m Elektronische Bauelemente Enhancement Mode Power Mos.FETRoHS Compliant ProductSOP-8Description0.190.250.400.90o0.375 REFThe SSG4503 provide the designer with the best combination of fast switching, 6.205.800.25ruggedized device design, low on-resistance and cost-effectiveness.

8.3. ssg4501.pdf Size:876K _secos

SSG4501N Channel 7A, 30V,RDS(ON) 28m P Channel -5.3A, -30V,RDS(ON) 50m Elektronische Bauelemente Enhancement Mode Power Mos.FET RoHS Compliant Product SOP-8Description0.190.250.400.90o0.375 REFThe SSG4501 provide the designer with the best combination of fast switching, 6.205.800.25rugged

Download vpn express for mac. 8.4. ssg4502c.pdf Size:1023K _secos

SSG4502C N-Ch: 10 A, 30 V, RDS(ON) 16 mP-Ch: -8.5 A, -30 V, RDS(ON) 23 mElektronische Bauelemente N & P-Ch Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION SOP-8 These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power lo

Другие MOSFET.. SSG4480N, SSG4490N, SSG4492N, SSG4499P, SSG4501, SSG4502C, SSG4502CE, SSG4503, IRFZ48N, SSG4510, SSG4512CE, SSG4520H, SSG4530C, SSG4536C, SSG4542C, SSG4543C, SSG4639STM.

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