- Development Boards, Kits, Programmers – Evaluation and Demonstration Boards and Kits are in stock at DigiKey. Development Boards, Kits, Programmers ship same day.
- Epc2204 trans gan 100v die 5.6mohm. Epc 2,13000 € details. Epc90123 board dev epc2218 100v egan fet. Epc 101,22000 € details. Epc2215 gan trans 200v 8mohm bumped die. Epc 5,22000 € details. Epc2103 gan trans symmetrical half bridg.
- The EPC2218 is priced at $2.09 each and the EPC2204 at $0.99 each (in 2.5k reels), with half-bridge development boards EPC90123 and EPC9097, respectively, both priced at $118.75. All products and boards are available from distributor Digi-Key Corp. Visit: www.epc-co.com.
- EPC2218 and EPC2204 100-V eGaN FETs SiC Power Module And Gate Driver Kit Speeds Inverter Design, Microchip Technology’s AgileSwitch digital programmable gate driver and SP6LI SiC power module kit, How2Power Today, September 2020 issue. Latest Generation 200-V GaN FETs Double The Performance, EPC’s EPC2215 and EPC2207 200-V.
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Efficient Power Conversion (EPC)Efficient Power Conversion Corporation (EPC) is the leader in enhancement mode Gallium Nitride based power management devices. EPC was the first to introduce enhancement-mode Gallium-Nitride-on-Silicon (eGaN®) FETs as power MOSFET replacements in applications such as point-of-load converters, Power over Ethernet (PoE), server and computer DC-DC converters, LED lighting, cell phones, RF.
says that the FETs increase the benchmark performance compared with silicon MOSFETs further than earlier generations of eGaN on silicon power FETs.The two 100V eGaN FETs are designed for synchronous rectification, Class D audio, infotainment systems, DC/DC converters (hard-switched and resonant) and lidar systems for autonomous cars, robotics and drones.
The EPC2218 is an 3.2mΩ, 231A pulsed eGaN FET and the EPC2204 is a 6mΩ, 125A pulsed eGaN FET. They both have nearly 20% lower RDS(on) and increased DC ratings compared with earlier generation eGaN FET products. According to EPC, the performance advantage over a benchmark silicon device is even higher than previous eGaN FETs.
The EPC2204 has 25% lower RDS(on) than the benchmark silicon MOSFET, but it is three times smaller, says the company. In addition, gate charge (QG) is less than half that of the silicon MOSFET benchmark. (The benchmark silicon MOSFET measures 3.3 x 3.3mm compared with 1.5 x 2.5mm.)
As is the case with all eGaN FETs, there is no reverse recovery charge (QRR), adds the company. This feature enables lower distortion class-D audio amplifiers, as well as more efficient synchronous rectifiers and motor drives.
The 100V eGaN FETs are cost-competitive, at a price comparable with a silicon power MOSFET, says EPC. EPC co-founder and CEO, Alex Lidow, said: “EPC has priced these state-of-the-art 100 V transistors comparable with their aging ancestor, the silicon power MOSFET. Designers can take advantage of devices that are higher performance, smaller, more thermally efficient, and at a comparable cost. The displacement of the power MOSFET with GaN devices continues to accelerate”.
The EPC2218 and EPC2204 are available now from distributor, Digi-Key Electronics. There are also half bridge development boards for each, the EPC90123, for the EPC2218 and the EPC9097 half bridge development board for the EPC2204.
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EL SEGUNDO, Calif.--(BUSINESS WIRE)--Sep 22, 2020--
EPC, the world’s leader in enhancement-mode gallium nitride on silicon (eGaN) power FETs and ICs, advances the performance capability while lowering the cost of off-the-shelf gallium nitride transistors with the introduction of EPC2218 and EPC2204 100 V eGaN FETs. The applications for these leading-edge devices include synchronous rectification, class-D audio, infotainment systems, DC-DC converters (hard-switched and resonant), and lidar for autonomous cars, robotics, and drones.
This press release features multimedia. View the full release here: https://www.businesswire.com/news/home/20200922005280/en/
Performance comparison of benchmark silicon 100 V FET vs. 100 V eGaN FETs (Graphic: Business Wire)
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The EPC2218 (3.2 mΩ, 231 A pulsed ) and the EPC2204 (6 mΩ, 125 A pulsed ) have nearly 20% lower R DS(on), as well as increased DC ratings compared with prior generation eGaN FET products. The performance advantage over a benchmark silicon device is even higher.
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The EPC2204 has 25% lower on-resistance, yet is three times smaller in size. Gate charge (Q G ) is less than half that of the silicon MOSFET benchmark, and like all eGaN FETs, there is no reverse recovery charge (Q RR ), enabling lower distortion class-D audio amplifiers, as well as more efficient synchronous rectifiers and motor drives.
Alex Lidow, EPC’s co-founder and CEO commented, “With the clear superiority of these new 100 V eGaN FETs, one might expect them to be priced at a premium. However, EPC has priced these state-of-the-art 100 V transistors comparable with their aging ancestor, the silicon power MOSFET. Designers can take advantage of devices that are higher performance, smaller, more thermally efficient, and at a comparable cost. The displacement of the power MOSFET with GaN devices continues to accelerate.”
Price and Availability
Pricing for products and related development and reference design boards are noted in the table below. All products and boards are available from Digi-Key at http://www.digikey.com/Suppliers/us/Efficient-Power-Conversion.page?lang=en
Part | 2.5K Reel Price/Unit | Half-Bridge | Price per |
EPC2218 | $2.09 | EPC90123 | $118.75 |
EPC2204 | $0.99 | EPC9097 | $118.75 |
About EPC
EPC is the leader in enhancement-mode gallium nitride-based power management devices. EPC was the first to introduce enhancement-mode gallium-nitride-on-silicon (eGaN) FETs as power MOSFET replacements in applications such as DC-DC converters, wireless power transfer, envelope tracking, RF transmission, power inverters, remote sensing technology (Lidar), and class-D audio amplifiers with device performance many times greater than the best silicon power MOSFETs. EPC also has a growing portfolio of eGaN-based integrated circuits that provide even greater space, energy, and cost efficiency.
Visit our web site: www.epc-co.com
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eGaN is a registered trademark of Efficient Power Conversion Corporation, Inc.
View source version on businesswire.com:https://www.businesswire.com/news/home/20200922005280/en/
Epc2104
Efficient Power Conversion: Renee Yawger tel: +1.908.475.5702 email:renee.yawger@epc-co.com
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Epc Gan Fets
SOURCE: EPC
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